Forming low-resistance contact to silicon
US4502209A · kind A · utility
64Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1983 |
| Grant date | Mar 5, 1985 |
| Priority date | — |
| Expiry date | Aug 31, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Annealing a titanium-rich carbide film deposited on silicon produces, in a single processing step, both a stable titanium silicide contact and a titanium carbide diffusion barrier between the silicide and a subsequently formed overlying layer of aluminum. Reliable low-resistance contacts to VLSI devices are thereby provided in a cost-effective fabrication sequence. Other metallization systems, comprising a silicide and a diffusion barrier to aluminum formed in a single processing step, are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.