Moshe Eizenberg
8Patents
5h-index
12Co-inventors
56Inventor score
Filing activity: Aug 31, 1983 → May 15, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4502209A | Forming low-resistance contact to silicon | Electricity | 64 | Expired |
| US5817576A | Utilization of SiH.sub.4 soak and purge in deposition processes | Emerging Cross-Sectional Technologies | 60 | Expired |
| US5643633A | Uniform tungsten silicide films produced by chemical vapor depostiton | Emerging Cross-Sectional Technologies | 46 | Expired |
| US6410460B1 | Technology for thermodynamically stable contacts for binary wide band gap semiconductors | Electricity | 18 | Expired |
| US5558910A | Uniform tungsten silicide films produced by chemical vapor deposition | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5780360A | Purge in silicide deposition processes dichlorosilane | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6193813A | Utilization of SiH4 soak and purge in deposition processes | Emerging Cross-Sectional Technologies | 1 | Expired |
| US4980751A | Electrical multilayer contact for microelectronic structure | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.