Two-step plasma process for selective anisotropic etching of polycrystalline silicon without leaving residue
US4502915A · kind A · utility
21Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1984 |
| Grant date | Mar 5, 1985 |
| Priority date | — |
| Expiry date | Jan 23, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a two-step for selective anisotropic etching of polycrystalline silicon having a silicon dioxide base thereunder and an exposed opposing face with contaminants thereon including silicon dioxide without leaving a residue wherein the silicon is initially etched with a non-selective etchant for a distance below all contaminants and then an etchant used is a highly anisotropic selective polycrystalline silicon etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.