Optimum reduced pressure epitaxial growth process to prevent autodoping
US4504330A · kind A · utility
3Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1983 |
| Grant date | Mar 12, 1985 |
| Priority date | — |
| Expiry date | Oct 19, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/916
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reduced pressure epitaxial deposition method is disclosed to maximize performance and leakage limited yield of devices formed in the epitaxial layer. The method includes specified prebake and deposition conditions designed to minimize arsenic (buried subcollector) and boron (buried isolation) autodoping effects when pressures below one atmosphere are selected in accordance with the subcollector-to-isolation area ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.