Subhash B. Kulkarni
14Patents
9h-index
17Co-inventors
69Inventor score
Filing activity: Oct 19, 1983 → Jul 27, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5675185A | Semiconductor structure incorporating thin film transistors with undoped cap oxide layers | Electricity | 86 | Expired |
| US6133610A | Silicon-on-insulator chip having an isolation barrier for reliability and process of manufacture | Electricity | 41 | Expired |
| US6809005B2 | Method to fill deep trench structures with void-free polysilicon or silicon | Electricity | 38 | Expired |
| US6022766A | Semiconductor structure incorporating thin film transistors, and methods for its manufacture | Electricity | 35 | Expired |
| US5670812A | Field effect transistor having contact layer of transistor gate electrode material | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5562770A | Semiconductor manufacturing process for low dislocation defects | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5744384A | Semiconductor structures which incorporate thin film transistors | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5757050A | Field effect transistor having contact layer of transistor gate electrode material | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6281095A | Process of manufacturing silicon-on-insulator chip having an isolation barrier for reliability | Electricity | 9 | Expired |
| US6563173B2 | Silicon-on-insulator chip having an isolation barrier for reliability | Electricity | 9 | Expired |
| US6492684B2 | Silicon-on-insulator chip having an isolation barrier for reliability | Electricity | 5 | Expired |
| US4504330A | Optimum reduced pressure epitaxial growth process to prevent autodoping | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7144769B2 | Method to achieve increased trench depth, independent of CD as defined by lithography | Electricity | 2 | Expired |
| US6821864B2 | Method to achieve increased trench depth, independent of CD as defined by lithography | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.