Photoresist material
US4504631A · kind A · utility
3Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 1983 |
| Grant date | Mar 12, 1985 |
| Priority date | — |
| Expiry date | May 31, 2003 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F8/24
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The photoresist material comprises a polymer having chloromethyl groups introduced therein and containing 2-isopropenylnaphthalene as one component, an average substitution degree of the chloromethyl groups based on the polymer is within a range of 0.2 to 5. The photoresist material has a high glass transition point, a high sensitivity to radiation and an excellent dry etching resistance, whereby it is suitably used for the manufacture of a semiconductor element using radiation and provides a good resolution on etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.