Semiconductor device with built-up low resistance contact
US4505029A · kind A · utility
40Cited by
9References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1983 |
| Grant date | Mar 19, 1985 |
| Priority date | — |
| Expiry date | Jul 8, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having particularly low resistance connection to a portion thereof carrying substantial current is described. First and second electrodes are provided on a major surface of the semiconductor, the first electrode providing lateral contact to a control region of the semiconductor device; the second electrode providing low impedance vertical contact to the high current carrying region. A conductive plate is supported between upstanding spaced apart portions of the second electrode and is thereby vertically spaced apart from the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.