King Owyang
36Patents
22h-index
43Co-inventors
85Inventor score
Filing activity: Dec 24, 1980 → Apr 5, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5757081A | Surface mount and flip chip technology for total integrated circuit isolation | Emerging Cross-Sectional Technologies | 185 | Expired |
| US4412142A | Integrated circuit incorporating low voltage and high voltage semiconductor devices | Electricity | 162 | Expired |
| US5753529A | Surface mount and flip chip technology for total integrated circuit isolation | Emerging Cross-Sectional Technologies | 137 | Expired |
| US5767578A | Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation | Electricity | 126 | Expired |
| US5578851A | Trenched DMOS transistor having thick field oxide in termination region | Electricity | 118 | Expired |
| US5639676A | Trenched DMOS transistor fabrication having thick termination region oxide | Electricity | 116 | Expired |
| US5532179A | Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof | Electricity | 90 | Expired |
| US5316959A | Trenched DMOS transistor fabrication using six masks | Electricity | 87 | Expired |
| US5404040A | Structure and fabrication of power MOSFETs, including termination structures | Electricity | 72 | Expired |
| US5468982A | Trenched DMOS transistor with channel block at cell trench corners | Electricity | 59 | Expired |
| US5517379A | Reverse battery protection device containing power MOSFET | Electricity | 56 | Expired |
| US5132753A | Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs | Electricity | 46 | Expired |
| US5304831A | Low on-resistance power MOS technology | Electricity | 42 | Expired |
| US4505029A | Semiconductor device with built-up low resistance contact | Electricity | 40 | Expired |
| US6744124B1 | Semiconductor die package including cup-shaped leadframe | Electricity | 40 | Expired |
| US5910669A | Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof | Electricity | 39 | Expired |
| US5521409A | Structure of power mosfets, including termination structures | Electricity | 33 | Expired |
| US5426325A | Metal crossover in high voltage IC with graduated doping control | Electricity | 32 | Expired |
| US5429964A | Low on-resistance power MOS technology | Electricity | 29 | Expired |
| US7394150B2 | Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys | Electricity | 24 | Expired |
| US4803533A | IGT and MOSFET devices having reduced channel width | Emerging Cross-Sectional Technologies | 24 | Expired |
| US7238551B2 | Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys | Electricity | 22 | Expired |
| US7033876B2 | Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same | Electricity | 20 | Expired |
| US4475280A | Method of making an integrated circuit incorporating low voltage and high voltage semiconductor devices | Electricity | 12 | Expired |
| US4794432A | Mosfet structure with substrate coupled source | Electricity | 12 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.