Impurity reduction technique for mercury cadmium telluride
US4507160A · kind A · utility
7Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1983 |
| Grant date | Mar 26, 1985 |
| Priority date | — |
| Expiry date | Dec 23, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/477
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a method for reducing impurity concentration in mercury cadmium telluride alloys wherein impurities are attracted to a region saturated with second phase tellurium during annealing in a saturated mercury atmosphere where the second phase tellurium and the impurities attracted thereto can be removed by polishing, etching, grinding, or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.