Method for contacting a narrow width PN junction region
US4507171A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1982 |
| Grant date | Mar 26, 1985 |
| Priority date | — |
| Expiry date | Aug 6, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making contact to a narrow width PN junction region in any desired semiconductor body is described. A substantially vertical conformal conductive layer is formed over the desired PN junction region. The body is heated at a suitable temperature to cause a dopant to diffuse from the vertical conductive layer into the semiconductor body to form the narrow width PN junction region. A substantially horizontal conductive layer makes contact to the substantially vertical layer so as to have the horizontal conductive layer in electrical contact to the PN junction region. Electrical contact can be made to the horizontal conductive layer at any convenient location. A lateral PNP transistor is one type of very small device that can be made using the method of the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.