Method for the deposition of high-quality crystal epitaxial films of iron
US4508590A · kind A · utility
7Cited by
12References
15Claims
0Family size
Inventors
Key dates
| Filing date | Sep 16, 1983 |
| Grant date | Apr 2, 1985 |
| Priority date | — |
| Expiry date | Sep 16, 2003 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a single crystal epitaxial film of a selected metal on the surface of a substrate. The method includes the steps of positioning the substrate in an ultra high vacuum environment and exposing the substrate surface to a metalorganic vapor including ions of the selected metal while maintaining an ultra high vacuum environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.