Patent · US Expired

Recessed metallization

US4508815A · kind A · utility

22Cited by
3References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 3, 1983
Grant dateApr 2, 1985
Priority date
Expiry dateNov 3, 2003

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/7688
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An improved method of planarizing a level of metallization employs a trench in a smooth-surfaced dielectric and a sequence of etching steps to cut the trench locally down to the substrate, while forming the main metallization pattern at the same time.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.