Recessed metallization
US4508815A · kind A · utility
22Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1983 |
| Grant date | Apr 2, 1985 |
| Priority date | — |
| Expiry date | Nov 3, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7688
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of planarizing a level of metallization employs a trench in a smooth-surfaced dielectric and a sequence of etching steps to cut the trench locally down to the substrate, while forming the main metallization pattern at the same time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.