Phase-locked semiconductor laser device
US4509173A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1982 |
| Grant date | Apr 2, 1985 |
| Priority date | — |
| Expiry date | Apr 7, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4068
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device is provided with a semiconductor substrate and at least a semiconductor assembly for optical confinement formed on the substrate which includes an active layer and cladding layers. A first electrode is disposed on the semiconductor assembly and a second electrode is disposed on the semiconductor substrate. To provide a phase-locked semiconductor laser device of high quality, a plurality of regions are provided in the semiconductor assembly which, in effect, cause a variation of a complex refractive index for a laser beam in a direction intersecting with a traveling direction of the laser beam. These regions can be discretely disposed over or under the active layer and give rise to a nonlinear interaction between adjacent laser emission regions formed by the plurality of regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.