Thin film resistor material and method
US4510178A · kind A · utility
26Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1983 |
| Grant date | Apr 9, 1985 |
| Priority date | — |
| Expiry date | Feb 14, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.