Control of etch rate ratio of SiO.sub.2 /photoresist for quartz planarization etch back process
US4511430A · kind A · utility
29Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1984 |
| Grant date | Apr 16, 1985 |
| Priority date | — |
| Expiry date | Jan 30, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of controlling the etch rate ratio of SiO.sub.2 /photoresist (PR) in a quartz planarization etch back process involves etching with a gaseous mixture containing CF.sub.4 and either CHF.sub.3 or C.sub.x F.sub.y with x>1 or O.sub.2. The preferred SiO.sub.2 /PR ratio of 1.2.+-.0.1 is obtained by either adding CHF.sub.3 to decrease the etch rate of the PR or by adding O.sub.2 to increase the etch rate of the PR.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.