Lee Chen
13Patents
11h-index
18Co-inventors
69Inventor score
Filing activity: Dec 22, 1983 → Feb 25, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4534816A | Single wafer plasma etch reactor | Electricity | 404 | Expired |
| US4493745A | Optical emission spectroscopy end point detection in plasma etching | Chemistry; Metallurgy | 84 | Expired |
| US5468955A | Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer | Electricity | 64 | Expired |
| US4478677A | Laser induced dry etching of vias in glass with non-contact masking | Performing Operations; Transporting | 57 | Expired |
| US4490211A | Laser induced chemical etching of metals with excimer lasers | Electricity | 56 | Expired |
| US4602981A | Monitoring technique for plasma etching | Electricity | 55 | Expired |
| US4671849A | Method for control of etch profile | Electricity | 54 | Expired |
| US4741799A | Anisotropic silicon etching in fluorinated plasma | Electricity | 44 | Expired |
| US4490210A | Laser induced dry chemical etching of metals | Chemistry; Metallurgy | 32 | Expired |
| US4511430A | Control of etch rate ratio of SiO.sub.2 /photoresist for quartz planarization etch back process | Electricity | 29 | Expired |
| US5286331A | Supersonic molecular beam etching of surfaces | Chemistry; Metallurgy | 18 | Expired |
| US5423940A | Supersonic molecular beam etching of surfaces | Chemistry; Metallurgy | 11 | Expired |
| US10262869B2 | Planarization method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.