Charge pump for providing programming voltage to the word lines in a semiconductor memory array
US4511811A · kind A · utility
66Cited by
5References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 8, 1982 |
| Grant date | Apr 16, 1985 |
| Priority date | — |
| Expiry date | Feb 8, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A charge pump for providing programming voltages to the word lines of a semiconductor memory array is disclosed. The charge pump, configured as a combination of enhancement and native MOS transistors, prevents DC current from flowing from the source of the programming voltage to ground through unselected word lines, and thereby permits the design of semiconductor programmable memory arrays having on-chip programming voltage generation, allowing for design of semiconductor programmable memory arrays which operate from a single voltage power supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.