Pressure sensor with improved semiconductor diaphragm
US4511878A · kind A · utility
10Cited by
9References
8Claims
0Family size
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Key dates
| Filing date | Sep 20, 1983 |
| Grant date | Apr 16, 1985 |
| Priority date | — |
| Expiry date | Sep 20, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S73/04
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is a pressure sensor of semiconductor type, having a semiconductor diaphragm, wherein the diaphragm comprises at least one of thin wall parts and at least one of thick wall parts, and defines therein recesses formed in the lower surface of the diaphragm below the thin wall parts, piezoresistance elements are laid on the upper surface of the diaphragm near the thin wall parts, and a supporting member is sealingly jointed to the thick wall parts at the lower surface of the diaphragm, so that the recesses are sealed and confined so as to prevent high pressure fluid from blowing off when the thin wall part is broken.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.