Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
US4512391A · kind A · utility
118Cited by
15References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 29, 1982 |
| Grant date | Apr 23, 1985 |
| Priority date | — |
| Expiry date | Jan 29, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for the uniform thermal treatment of semiconductor wafers by gas conduction holds the wafer in place over a gas filled cavity in opposition to a thermal mass maintained at an appropriate temperature. Gas is introduced behind the semiconductor wafer adjacent its periphery to produce a near-constant gas pressure across the backside of the wafer. The constant pressure produces constant thermal conductivity. Consequently, heat conduction is uniform, the temperature of the wafer is uniform and uniform processing is accomplished across the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.