Microwave plasma processing apparatus
US4512868A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1984 |
| Grant date | Apr 23, 1985 |
| Priority date | — |
| Expiry date | Jul 9, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32357
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microwave plasma processing apparatus for dry etching or ashing in a fabricating process for an integrated circuit semiconductor device is improved to provide a higher processing rate. The apparatus comprises a plasma generating region formed in a part of a waveguide through which microwave power is transmitted. A reactive gas is introduced into the plasma generating region and a plasma is generated by the microwave power applied thereto. A reacting region is coupled to the plasma generating region through a shielding member, wherein radicals of the reactive gas generated in the plasma enter the reacting region through the shielding member. The plasma generating region, the reacting region and an evacuating device comprise a vacuum system and establish a fixed gas pressure for the reactive gas. The radicals (active species) react with an object placed in the reacting region, forming volatile compounds which are removed by the evacuating device. The plasma is confined in the plasma generating region by the shielding means, thereby preventing damage of the object due to the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.