Self-aligned metal field effect transistor integrated circuit
US4513303A · kind A · utility
16Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1982 |
| Grant date | Apr 23, 1985 |
| Priority date | — |
| Expiry date | Aug 6, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A self-aligned metal field effect transistor is described which achieves self-aligned metal to silicon contacts and submicron contact-to-contact and metal-to-metal spacing for field effect transistor integrated circuits. The insulation between the contacts and the metal is a pattern of dielectric material having a thickness dimension in the order of a micron or less. The metal and dielectric structure is substantially planar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.