Germanium p-i-n photodetector on silicon substrate
US4514748A · kind A · utility
12Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1983 |
| Grant date | Apr 30, 1985 |
| Priority date | — |
| Expiry date | Nov 21, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/223
Abstract
Devices useful, for example, as detectors in telecommunications systems have been formed utilizing a specific structure. In particular, a p-i-n device is fabricated on a silicon substrate having the necessary circuitry for signal processing. This p-i-n device is produced by depositing an intermediary region having a compositional gradient on this substrate and forming a germanium based p-i-n diode on the intermediary region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.