Patent · US Expired

Process for processing waste gases resulting during the production of silicon

US4515762A · kind A · utility

6Cited by
1References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 16, 1982
Grant dateMay 7, 1985
Priority date
Expiry dateNov 16, 2002

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC01B33/183
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

Waste gases resulting from the production of silicon in connection with the ormation or decomposition of chlorosilanes, which gases always contain hydrogen chloride, can be worked up without removal of the hydrogen chloride. For this purpose, the waste gases which, after separation from the chlorosilanes, only contain hydrogen and hydrogen chloride, are subjected to combustion with addition of air and, after addition of silicon tetrachloride, the result being highly dispersed SiO.sub.2. The hydrogen chloride then remaining in the gaseous phase is returned to the process stream for production of trichlorosilane.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.