Process for processing waste gases resulting during the production of silicon
US4515762A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1982 |
| Grant date | May 7, 1985 |
| Priority date | — |
| Expiry date | Nov 16, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B33/183
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Waste gases resulting from the production of silicon in connection with the ormation or decomposition of chlorosilanes, which gases always contain hydrogen chloride, can be worked up without removal of the hydrogen chloride. For this purpose, the waste gases which, after separation from the chlorosilanes, only contain hydrogen and hydrogen chloride, are subjected to combustion with addition of air and, after addition of silicon tetrachloride, the result being highly dispersed SiO.sub.2. The hydrogen chloride then remaining in the gaseous phase is returned to the process stream for production of trichlorosilane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.