Light induced etching of InP by aqueous solutions of H.sub.3 PO.sub.4
US4518456A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 11, 1983 |
| Grant date | May 21, 1985 |
| Priority date | — |
| Expiry date | Mar 11, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a semiconductor crystal is given. The crystal includes elements selected from one of the groups: (a) indium and phosphorus; (b) gallium and arsenic; (c) aluminum and arsenic. The method comprises the steps of placing the crystal in an aqueous solution of H.sub.3 PO.sub.4 or HCl, and while the crystal is in contact with the solution illuminating predetermined regions of the crystal with light so that etching proceeds at the illuminated predetermined regions much more rapidly than at nonilluminated regions of the crystal. The method also includes focusing the light to a small spot on the crystal and moving the spot on the crystal so that a groove is etched in the crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.