Method for depositing polysilicon over TiO.sub.2
US4521446A · kind A · utility
7Cited by
4References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 30, 1983 |
| Grant date | Jun 4, 1985 |
| Priority date | — |
| Expiry date | Nov 30, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Hydrogen annealing permits deposition of good quality polysilicon atop TiO.sub.2. Hydrogen annealing of TiO.sub.2 prevents the tremendous hydrogen affinity of as-deposited TiO.sub.2 from disrupting process reactions during deposition of polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.