Method of making integrated circuits using metal silicide contacts
US4521952A · kind A · utility
63Cited by
10References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 2, 1982 |
| Grant date | Jun 11, 1985 |
| Priority date | — |
| Expiry date | Dec 2, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal silicide contact to silicon devices which has broad application to almost all of the variety of silicon semiconductor devices is described. This contact with a substantial side component has particular advantage as the base contact for a bipolar transistor. However, contacts can be made to regions of any desired device regions with a variety of P+, N+, P, N, P-, N- and so forth conductivity types. Further, the contact can be an ohmic or Schottky contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.