Method for tapered dry etching
US4522681A · kind A · utility
41Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1984 |
| Grant date | Jun 11, 1985 |
| Priority date | — |
| Expiry date | Apr 23, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Holes in substrates are produced by a photolithography-plasma dry etching method employing a positive photoresist mask such as poly(methyl methacrylate) which is capable of being isotropically eroded by plasma action. The result is simultaneous anisotropic etching of the substrate and isotropic erosion of the mask, producing tapered holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.