Bernard Gorowitz
29Patents
22h-index
35Co-inventors
85Inventor score
Filing activity: Oct 18, 1976 → Dec 13, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5527741A | Fabrication and structures of circuit modules with flexible interconnect layers | Emerging Cross-Sectional Technologies | 227 | Expired |
| US5366906A | Wafer level integration and testing | Electricity | 116 | Expired |
| US5736448A | Fabrication method for thin film capacitors | Electricity | 104 | Expired |
| US5757072A | Structure for protecting air bridges on semiconductor chips from damage | Electricity | 99 | Expired |
| US6046410A | Interface structures for electronic devices | Emerging Cross-Sectional Technologies | 94 | Expired |
| US5524339A | Method for protecting gallium arsenide mmic air bridge structures | Emerging Cross-Sectional Technologies | 90 | Expired |
| US5857858A | Demountable and repairable low pitch interconnect for stacked multichip modules | Electricity | 85 | Expired |
| US5657537A | Method for fabricating a stack of two dimensional circuit modules | Emerging Cross-Sectional Technologies | 79 | Expired |
| US6298551A | Methods of forming compliant interface structures with partially open interiors for coupling two electrically conductive contact areas | Emerging Cross-Sectional Technologies | 70 | Expired |
| US5257496A | Combustion control for producing low NO.sub.x emissions through use of flame spectroscopy | Emerging Cross-Sectional Technologies | 67 | Expired |
| US5391516A | Method for enhancement of semiconductor device contact pads | Electricity | 50 | Expired |
| US4998151A | Power field effect devices having small cell size and low contact resistance | Electricity | 48 | Expired |
| US4522681A | Method for tapered dry etching | Electricity | 41 | Expired |
| US5303684A | Combustion control for producing low NO.sub.x emissions through use of flame spectroscopy | Emerging Cross-Sectional Technologies | 39 | Expired |
| US4824802A | Method of filling interlevel dielectric via or contact holes in multilevel VLSI metallization structures | Electricity | 39 | Expired |
| US4845050A | Method of making mo/tiw or w/tiw ohmic contacts to silicon | Emerging Cross-Sectional Technologies | 38 | Expired |
| US5576925A | Flexible multilayer thin film capacitors | Electricity | 38 | Expired |
| US5561085A | Structure for protecting air bridges on semiconductor chips from damage | Electricity | 35 | Expired |
| US4444618A | Processes and gas mixtures for the reactive ion etching of aluminum and aluminum alloys | Electricity | 31 | Expired |
| US5973908A | Structure for thin film capacitors | Electricity | 28 | Expired |
| US5699234A | Stacking of three dimensional high density interconnect modules with metal edge contacts | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5401687A | Process for high density interconnection of substrates and integrated circuit chips containing sensitive structures | Electricity | 27 | Expired |
| US4871617A | Ohmic contacts and interconnects to silicon and method of making same | Emerging Cross-Sectional Technologies | 8 | Expired |
| US4933742A | Metallization contact system for large scale integrated circuits | Electricity | 8 | Expired |
| US4188413A | Electrostatic-fluidized bed coating of wire | Performing Operations; Transporting | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.