Amorphous silicon photoconductive member with interface and rectifying layers
US4522905A · kind A · utility
Inventors
Key dates
| Filing date | Feb 1, 1983 |
| Grant date | Jun 11, 1985 |
| Priority date | — |
| Expiry date | Feb 1, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/0825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoconductive member comprises a support for photoconductive member, an interface layer constituted of an amorphous material containing at least silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms and an amorphous layer exhibiting photoconductivity constituted of an amorphous material containing at least one of hydrogen atoms or halogen atoms as constituent atoms in a matrix of silicon atoms, said rectifying layer having a layer thickness t which from 30 .ANG. up to, but not reaching, 0.3.mu. and the content C(A) of the aforesaid atoms contained in the rectifying layer being 30 atomic ppm or more, or said t being 30 .ANG. or more and said C(A) being from 30 atomic ppm up to, but not reaching, 100 atomic ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.