MOS Semiconductor device and method of manufacturing the same
US4523213A · kind A · utility
60Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1982 |
| Grant date | Jun 11, 1985 |
| Priority date | — |
| Expiry date | Jul 9, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An MOS semiconductor device, wherein a buried region of silicon oxide or silicon nitride extends partly over the bottom plane of the channel region of an MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.