Method of depositing fully reacted titanium disilicide thin films
US4526665A · kind A · utility
8Cited by
6References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1984 |
| Grant date | Jul 2, 1985 |
| Priority date | — |
| Expiry date | Aug 20, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The subject invention is a method of sputtering a material on a substrate in which the substrate is first locally heated so that the mobility on the surface of the substrate is increased to a value E.sub.s. A material is then sputtered on the substrate with a sputtering energy E.sub.k whereby the sum of E.sub.k and E.sub.s is greater than the activation energy required for a chemical reaction to occur between the sputtered surface of the substrate and the sputtered material. In the preferred embodiment, the substrate is silicon and the material to be sputtered is a refractory metal such as titanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.