MOS Voltage divider structure suitable for higher potential feedback regulation
US4527180A · kind A · utility
20Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 31, 1983 |
| Grant date | Jul 2, 1985 |
| Priority date | — |
| Expiry date | Jan 31, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An MOS voltage divider is described which is particularly useful for dividing a relatively high voltage (e.g., 21 volts). Capacitance division is employed, thus, the divider consumes substantially no current. Capacitors are fabricated from first and second layers of polysilicon and an intermediate layer of silicon dioxide. Common centroid geometry is used to compensate for process variations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.