Duane H. Oto
2Patents
2h-index
2Co-inventors
30Inventor score
Filing activity: Jan 31, 1983 → Apr 16, 1987
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4797856A | Self-limiting erase scheme for EEPROM | Physics | 53 | Expired |
| US4527180A | MOS Voltage divider structure suitable for higher potential feedback regulation | Electricity | 20 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.