Dynamic random access memory having separated V.sub.DD pads for improved burn-in
US4527254A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1982 |
| Grant date | Jul 2, 1985 |
| Priority date | — |
| Expiry date | Nov 15, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/401
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A random access memory, a method of manufacturing a random access memory, and a method of testing a random access memory in which separate operating voltage terminal pads are provided for the memory cell arrays and peripheral circuits of the memory. By providing separate operating voltage terminal pads, different operating voltages can be applied to the array of cells and the peripheral circuits during a burn-in procedure. In this manner, the burn-in procedure is greatly accelerated without danger of damage to the peripheral circuits due to exceeding the sustaining voltages of the transistor devices of the peripheral circuits during burn-in.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.