Photoresponsive semiconductor device having a double layer anti-reflective coating
US4528418A · kind A · utility
17Cited by
3References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 24, 1984 |
| Grant date | Jul 9, 1985 |
| Priority date | — |
| Expiry date | Feb 24, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
Disclosed is an improved dual layer anti-reflective coating for use in a photoresponsive semiconductor device, and a device incorporating the coating. The coating has a uniformly low parasitic absorbance in the range of about 475 to 600 nanometers. The dual layer has an incident light layer and an intermediate layer. The intermediate layer is formed of a silicon alloy material having at least one band gap widening element incorporated therein. The index of refraction of the intermediate layer has an index of refraction intermediate the indexes of the incident light layer and the underlying photoresponsive semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.