Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy
US4529455A · kind A · utility
48Cited by
2References
18Claims
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Key dates
| Filing date | Oct 28, 1983 |
| Grant date | Jul 16, 1985 |
| Priority date | — |
| Expiry date | Oct 28, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.