Dry etching apparatus and method using reactive gases
US4529475A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 1984 |
| Grant date | Jul 16, 1985 |
| Priority date | — |
| Expiry date | May 23, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching apparatus is disclosed which uses reactive gases and which is capable of achieving anisotropic etching without causing radiation damage to a workpiece to be selectively etched. The workpiece is placed in a vacuum container into which two feedstock gases are introduced. One of the gases contributes to the etching, while the other forms a film on the side wall of the etched portion of the workpiece, the film protecting it against lateral etching. A first beam which dissociates the first feedstock gas is perpendicularly directed toward the workpiece, whereas a second gas which dissociates the second feedstock gas is directed in the general direction of the workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.