Ohmic contacts for hydrogenated amorphous silicon
US4529619A · kind A · utility
5Cited by
7References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1984 |
| Grant date | Jul 16, 1985 |
| Priority date | — |
| Expiry date | Jul 16, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an ohmic contact between an amorphous silicon hydride semiconductor and a substrate which includes coating a film of palladium on the substrate and overcoating the palladium with a thin film of amorphous silicon hydride forming a thin palladium silicide layer. The amorphous silicon hydride is dehydrogenated by annealing forming a highly defective amorphous silicon layer and a thicker palladium silicide layer through which carriers can readily tunnel. The amorphous silicon hydride semiconductor is then coated over the amorphous silicon layer to the desired thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.