Bipolar transistors having vertically arrayed collector-base-emitter with novel polycrystalline base electrode surrounding island emitter and method of making same
US4531282A · kind A · utility
54Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 1984 |
| Grant date | Jul 30, 1985 |
| Priority date | — |
| Expiry date | Jan 17, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/421
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a bipolar transistor, around the border line of the surface of a base region formed on a semiconductor substrate is formed a base electrode having a constant width of less than one micron and made of polycrystalline silicon. An island shaped emitter region is formed in the base region and an emitter electrode is formed on the surface of the emitter region. The emitter electrode is electrically isolated from the base electrode by an insulating film extending between the periphery of the emitter region and the base electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.