Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance
US4532003A · kind A · utility
19Cited by
5References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 9, 1982 |
| Grant date | Jul 30, 1985 |
| Priority date | — |
| Expiry date | Aug 9, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor having a first and second selective collector region extending from a buried high impurity region to the surface of the substrate. The first selective region defines the plane breakdown voltage to be equivalent to the planar breakdown voltage of the base-collector junction and the selective regions and the buried layer form a low series resistance collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.