James D. Beasom
125Patents
20h-index
17Co-inventors
87Inventor score
Filing activity: Jul 21, 1972 → Jul 25, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5770878A | Trench MOS gate device | Electricity | 144 | Expired |
| US6368920B1 | Trench MOS gate device | Electricity | 98 | Expired |
| US5436189A | Self-aligned channel stop for trench-isolated island | Emerging Cross-Sectional Technologies | 91 | Expired |
| US6894349B2 | Lateral DMOS structure with lateral extension structure for reduced charge trapping in gate oxide | Electricity | 60 | Expired |
| US5801084A | Bonded wafer processing | Emerging Cross-Sectional Technologies | 60 | Expired |
| US5892264A | High frequency analog transistors, method of fabrication and circuit implementation | Electricity | 57 | Expired |
| US5264719A | High voltage lateral semiconductor device | Electricity | 56 | Expired |
| US5668397A | High frequency analog transistors, method of fabrication and circuit implementation | Electricity | 51 | Expired |
| US5780311A | bonded wafer processing | Emerging Cross-Sectional Technologies | 44 | Expired |
| US5338960A | Formation of dual polarity source/drain extensions in lateral complementary channel MOS architectures | Electricity | 43 | Expired |
| US6822314B2 | Base for a NPN bipolar transistor | Electricity | 42 | Expired |
| US4120707A | Process of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusion | Electricity | 35 | Expired |
| US4567385A | Power switched logic gates | Electricity | 29 | Expired |
| US4823173A | High voltage lateral MOS structure with depleted top gate region | Electricity | 28 | Expired |
| US6902967B2 | Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action | Electricity | 27 | Expired |
| US4876579A | Low top gate resistance JFET structure | Electricity | 26 | Expired |
| US4210875A | Integrated amplifier with adjustable offset voltage | Electricity | 26 | Expired |
| US4694313A | Conductivity modulated semiconductor structure | Electricity | 26 | Expired |
| US5057895A | Trench conductor and crossunder architecture | Electricity | 23 | Expired |
| US5196373A | Method of making trench conductor and crossunder architecture | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5541435A | Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps | Electricity | 20 | Expired |
| US5493207A | Voltage divider and use as bias network for stacked transistors | Physics | 20 | Expired |
| US5283461A | Trench conductor and crossunder architecture | Emerging Cross-Sectional Technologies | 20 | Expired |
| US4532003A | Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance | Electricity | 19 | Expired |
| US4807012A | IC which eliminates support bias influence on dielectrically isolated components | Electricity | 19 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.