Sense amplifier for use with a semiconductor memory array
US4535259A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1982 |
| Grant date | Aug 13, 1985 |
| Priority date | — |
| Expiry date | Jun 18, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/067
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier (124) for use in determining the binary state of a selected storage device (4) in a semiconductor memory array (2) is disclosed. The sense amplifier (124) comprises a sensing section (150), a reference signal generator (148), and an inverting amplifier section (152). A relatively small current transistor (164) connected between a source of operating potential (158) and a voltage node (162) in the sensing section (150) supplies read currents to the selected storage device (4) via an enabled bit line (8) in the array (2). A second transistor (168) of relatively large size connected to the voltage node (162) in parallel with the current transistor (164) operates to rapidly raise the potential on the bit line (8) when the bit line (8) is first enabled. A third transistor (166) also of relatively large size connected between the voltage node (162) and the bit line (8) serves as a transfer gate for read currents. The reference signal generator (148) feeds a reference potential V.sub.ref to the control gates of the second and third transistors (168, 166), thereby establishing a quiescent bit line potential. The binary state of the selected storage device (4) can then be …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.