Process for the chemical vapor deposition of oxidic particles

US4539221A · kind A · utility

Assignee

• Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

• Herbert Jacob · Burghausen, DE
• Robert Rurlander · Burgkirchen an der Alz, DE
• Anton Schnegg · Burghausen, DE

Key dates

• Filing date: May 7, 1984
• Grant date: Sep 3, 1985
• Expiry date: May 7, 2004

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01G23/07
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A process for the chemical vapor deposition of oxidic particles by oxidat of halides or halide mixtures wherein dinitrogen monoxide is used as the oxidizing agent. The reaction is carried out at comparatively low temperatures of between 900.degree. and 1150.degree. C., but results in high yields.