Mask structure for X-ray lithography and method for making same
US4539278A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1984 |
| Grant date | Sep 3, 1985 |
| Priority date | — |
| Expiry date | Mar 12, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask substrate for use in X-ray lithography formed of a composite, X-ray transparent member which is stretched over a fixture to a predetermined tension and then adhered to a borosilicate glass ring. In accordance with a preferred embodiment, the composite member includes a film of polyborane which has been grown in compression, onto which a polyimide is coated. The polyborane film is grown on a silicon wafer, coated with the polyimide, after which the central area of the wafer is etched away. The borosilicate glass is adhered to the polyimide side of the composite, leaving the tensioned polyborane surface open for the application of an X-ray absorptive pattern thereto to define a complete mask structure suitable for use in X-ray lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.