Daniel L. Brors
18Patents
12h-index
12Co-inventors
75Inventor score
Filing activity: Oct 8, 1975 → Sep 10, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6321680A | Vertical plasma enhanced process apparatus and method | Electricity | 467 | Expired |
| US4565157A | Method and apparatus for deposition of tungsten silicides | Chemistry; Metallurgy | 81 | Expired |
| US5551985A | Method and apparatus for cold wall chemical vapor deposition | Chemistry; Metallurgy | 80 | Expired |
| US4629635A | Process for depositing a low resistivity tungsten silicon composite film on a substrate | Emerging Cross-Sectional Technologies | 79 | Expired |
| US4796562A | Rapid thermal CVD apparatus | Chemistry; Metallurgy | 74 | Expired |
| US4169031A | Magnetron sputter cathode assembly | Electricity | 46 | Expired |
| US6352594B2 | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors | Electricity | 44 | Expired |
| US6352593B1 | Mini-batch process chamber | Electricity | 43 | Expired |
| US4851295A | Low resistivity tungsten silicon composite film | Emerging Cross-Sectional Technologies | 42 | Expired |
| US4012766A | Semiconductor package and method of manufacture thereof | Emerging Cross-Sectional Technologies | 29 | Expired |
| USRE36957E | Method and apparatus for cold wall chemical vapor deposition | General | 17 | Expired |
| US6287635A | High rate silicon deposition method at low pressures | Electricity | 17 | Expired |
| US6506691B2 | High rate silicon nitride deposition method at low pressures | Electricity | 11 | Expired |
| US5291030A | Optoelectronic detector for chemical reactions | Physics | 10 | Expired |
| US4539278A | Mask structure for X-ray lithography and method for making same | Emerging Cross-Sectional Technologies | 9 | Expired |
| US4920908A | Method and apparatus for deposition of tungsten silicides | Chemistry; Metallurgy | 8 | Expired |
| US6780464B2 | Thermal gradient enhanced CVD deposition at low pressure | Electricity | 4 | Expired |
| US6235652A | High rate silicon dioxide deposition at low pressures | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.