Process for manufacturing a semi-conductor device of the type comprising at least one silicon layer deposited on an insulating substrate
US4540452A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1984 |
| Grant date | Sep 10, 1985 |
| Priority date | — |
| Expiry date | Mar 8, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a process comprising a step for depositing at least one intrinsic or doped monocrystalline silicon layer on a substrate, also monocrystalline, followed by a step for forming a thin silica layer at the level of the original substrate-silicon interface. The silica layer is obtained by oxidation through the substrate, followed by a heat treatment step during which the monocrystalline silicon is oxidized by the implanted oxygen ions. The first approach may take place according to two variants: thermal or plasma oxidation of the silicon-substrate interface. Oxidation takes place during the return to ambient temperature of the stack of layers after the deposit has been made.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.