Inventor · Sèvres, FR

Didier Pribat

31Patents
12h-index
36Co-inventors
81Inventor score

Filing activity: Jun 17, 1981 → May 1, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US5090932A Method for the fabrication of field emission type sources, and application thereof to the making of arrays of emitters Electricity 72 Expired
US4952526A Method for the fabrication of an alternation of layers of monocrystalline semiconducting material and layers of insulating material Emerging Cross-Sectional Technologies 64 Expired
US7491269B2 Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier Textiles; Paper 42 Expired
US4999314A Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material Emerging Cross-Sectional Technologies 42 Expired
US5314569A Method for the controlled growth of crystal whiskers and application thereof to the making of tip microcathodes Chemistry; Metallurgy 39 Expired
US5294564A Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding products Emerging Cross-Sectional Technologies 34 Expired
US6356028B1 Screen control with cathodes having low electronic affinity Physics 28 Expired
US5017340A Temperature compensated resistive type sensor for the measurement of relative concentrations of fluid reactive species Physics 27 Expired
US4413170A Thermal printing head Performing Operations; Transporting 25 Expired
US5127990A Method of fabricating an electronic micro-component self-sealed under vacuum, notably diode or triode Electricity 24 Expired
US5360754A Method for the making heteroepitaxial thin layers and electronic devices Electricity 20 Expired
US4540452A Process for manufacturing a semi-conductor device of the type comprising at least one silicon layer deposited on an insulating substrate Emerging Cross-Sectional Technologies 17 Expired
US5581146A Micropoint cathode electron source with a focusing electrode Electricity 11 Expired
US5262348A Method for the growing of heteroepitaxial layers within a confinement space Emerging Cross-Sectional Technologies 10 Expired
US5087275A Electrochemical sensor having microcavities Physics 9 Expired
US5273929A Method of manufacture transistor having gradient doping during lateral epitaxy Emerging Cross-Sectional Technologies 8 Expired
US5397735A Process for hardening active electronic components against ionizing radiations, and hardened components of large dimensions Emerging Cross-Sectional Technologies 8 Expired
US7214553B2 Process for the localized growth of nanotubes and process for fabricating a self-aligned cathode using the nanotube growth process Chemistry; Metallurgy 8 Expired
US5429737A Electrochemical sensor with integrated structure for the measurement of relative concentrations of reactive species Performing Operations; Transporting 6 Expired
US7846819B2 Method of synthesizing nanoscale filamentary structures, and electronic components comprising such structures Emerging Cross-Sectional Technologies 6 Active
US6476408B1 Field emission device Electricity 5 Expired
US5053833A Device made of oxide superconductive material covered with ion conductive means for adjusting the doping level and T.sub.c thereof Emerging Cross-Sectional Technologies 5 Expired
US4956073A Method to make microcavities and its application to an electrochemical sensor Physics 5 Expired
US9206509B2 Method for the controlled growth of a graphene film Chemistry; Metallurgy 4 Active
US8138046B2 Process for fabricating a nanowire-based vertical transistor structure Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.