Semiconductor devices of multi-emitter type
US4542398A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1984 |
| Grant date | Sep 17, 1985 |
| Priority date | — |
| Expiry date | Jun 18, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-emitter type semiconductor device, namely, a semiconductor device having an arrangement in which a majority of emitter regions are divided by a gate region and surrounded thereby. In the semiconductor device, a member adapted to apply an external control signal to a gate electrode takes the form of a closed-loop shape and the majority of emitter regions are arranged on both sides of the loop. This arrangement ensures that the individual emitter regions, even when the number of the emitter regions is increased to a great extent, can be applied with a uniform control signal, thereby preventing degradation of the turn-off characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.