Silicon oxynitride material and photochemical process for forming same
US4543271A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 2, 1984 |
| Grant date | Sep 24, 1985 |
| Priority date | — |
| Expiry date | Jul 2, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02277
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved silicon oxynitride material which is homogeneously chemically bonded and contains minimal free amorphous silicon has improved electrical insulating properties, hardness, scratch resistance, and adhesion. This material is formed on the surface of a selected substrates by a photochemical vapor deposition reaction. First a vapor mixture is formed comprising: ammonia and silane reactants in the ratio of 80:1 or higher; mercury vapors as a sensitizer for the desired photochemical reaction; and a predetermined amount of oxygen. This vapor mixture is introduced into a photochemical vapor deposition chamber containing the selected substrate, and radiation of a predetermined wavelength is simultaneously introduced into the deposition chamber. The selected radiation induces a photochemical reaction between the silane, ammonia, and oxygen to form silicon oxynitride which deposits on the substrate surface. The oxygen reacts with any excess silane to chemically bond and homogeneously incorporate the silicon from the excess silane into the silicon oxynitride material. Thus, the formation of free amorphous silicon from the silane and the heterogeneous incorporation thereof into the si…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.