Insulated-gate field-effect transistor (IGFET) with injector zone

US4543596A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Helmut Strack · Hersbruck, DE
• Jeno Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Jun 30, 1983
• Grant date: Sep 24, 1985
• Expiry date: Jun 30, 2003

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/141

Abstract

An IGFET assembly, includes a semiconductor substrate of a given first conductivity type having first and second surfaces, an IGFET having at least one channel zone of a second conductivity type opposite the first given conductivity type embedded in the first surface of the substrate, a source zone of the first conductivity type embedded planar in the channel zone, a drain zone adjacent the first surface of the substrate, a drain electrode connected to the second surface of the substrate, an insulating layer disposed on the first surface of the substrate, at least one gate electrode disposed on the insulating layer, at least one injector zone of the second conductivity type embedded in the first surface of the substrate, a contact for connecting the injector zone to a voltage source, an emitter zone of the first conductivity type embedded in the injector zone, the emitter zone having a heavier doping than the injector zone, the injector zone including a part thereof emerging to the first surface of the substrate, the drain zone having a part thereof emerging to the first surface of the substrate between the channel zone and the injector zone, the parts of the injector and drain zon…